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IXTA48P05T - P-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤30mΩ.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤30mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -50 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous -48 IDM Drain Current-Single Pulsed -150 PD Total Dissipation @TC=25℃ 150 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 0.83 UNIT ℃/W IXTA48P05T isc website：www.iscsemi.
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