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IXTA10P50P - Power MOSFET

Features

  • International Standard Packages.
  • Avalanche Rated.
  • Rugged PolarPTM Process.
  • Low Package Inductance.
  • Fast Intrinsic Diode Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription

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PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 =  RDS(on) - 500V - 10A 1 TO-3P (IXTQ) G S D (Tab) G DS D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings - 500 V - 500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C - 10 A - 30 A - 10 A 1.5 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 10 300 -55 ... +150 150 -55 ... +150 V/ns W C C C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 300 C 260 C Mounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.
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