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IXSP20N60B2 - High Speed IGBT

Download the IXSP20N60B2 datasheet PDF. This datasheet also covers the IXSP20N60B2D1 variant, as both devices belong to the same high speed igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • µs W °C °C °C g °C °C.
  • International standard package.
  • Guaranteed Short Circuit SOA capability.
  • Low VCE(sat) - for low on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.
  • Fast fall time for switching speeds up to 20 kHz.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXSP20N60B2D1_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXSP10N60B2D1 High Speed IGBT IXYS Corporation
IXSP15N120B High Voltage IGBT IXYS Corporation
IXSP16N60 Short Circuit SOA Capability IXYS Corporation
IXSA10N60B2D1 High Speed IGBT IXYS Corporation
IXSA15N120B High Voltage IGBT IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXSP20N60B2D1 High Speed IGBT
IXSP24N60B High Speed IGBT
IXSH10N60B2D1 High-Speed IGBT
IXSH15N120B High-Voltage IGBT
IXSH16N60U1 IGBT

Full PDF Text Transcription

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www.DataSheet4U.com High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSP 20N60B2 IXSP 20N60B2D1 VCES = 600 V I C25 = 35 A V CE(sat) = 2.5 V D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Symbol Test Conditions TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C Maximum Ratings 600 600 ± 20 ± 30 35 20 11 60 ICM = 32 @ 0.8 VCES 10 190 -55 ... +150 150 -55 ...
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