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IXGP20N120BD1 - High Voltage IGBT

Download the IXGP20N120BD1 datasheet PDF. This datasheet also covers the IXGP20N120B variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z Saves space (two devices in one package) z Easy to mount with 1 screw z Reduces assembly time and cost Symbol VGE(th) ICES IGES VCE(sat) Test Conditions IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V Note 2 Ch.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGP20N120B-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 Preliminary Data Sheet VCES IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 3.4 V = 160 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg Md Mounting torque (M3.5 screw) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight D1 Maximum Ratings 1200 1200 V V ±20 V ±30 V 40 A 20 A 100 A ICM = 40 @0.8 VCES 190 A W -55 ... +150 150 -55 ... +150 °C °C °C 0.55/5 Nm/lb.in.
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