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IXGP20N120B3 - GenX3 1200V IGBT

Download the IXGP20N120B3 datasheet PDF. This datasheet also covers the IXGA20N120B3 variant, as both devices belong to the same genx3 1200v igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Maximum Lead Temperature for Soldering 1.6mm (0.062 in. ) from Case for 10s TO-263 TO-220 z z Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Advantages z z High Power Density Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min. Typ. Max. 1200 2.5 5.0 25 1 ±100 TJ = 125°C 2.7 2.8 3.1 V V μA mA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGA20N120B3_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Preliminary Technical Information GenX3TM 1200V IGBT IXGA20N120B3 IXGP20N120B3 VCES = 1200V IC90 = 20A VCE(sat) ≤ 3.1V High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TJ = 125°C, RG = 15Ω Clamped Inductive load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 36 20 80 ICM = 40 @VCE ≤ 1200 180 -55 ... +150 150 -55 ... +150 V V V V A A A A V W °C °C °C Nm/lb.in. N/lb. °C °C g g G E C (TAB) TO-220 (IXGP) G C (TAB) C E G = Gate E = Emitter C = Collector TAB = Collector Mounting Torque (TO-220) Mounting Force (TO-263) 1.13/10 10..
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