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IXGF30N400 - High Voltage IGBT

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V Electrical Isolation.
  • High Peak Current Capability.
  • Low Saturation Voltage.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • High Power Density.
  • Easy to Mount.

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Full PDF Text Transcription

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High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) Not For New Designs IXGF30N400 VCES = 4000V IC25 = 30A VCE(sat)  3.1V Symbol VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C Continuous Transient 4000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, VGE = 20V, 1ms 30 A 15 A 360 A VGE= 20V, TVJ = 125°C, RG = 2 ICM = 300 A Clamped Inductive Load VCE  0.8 • VCES TC = 25°C 160 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 20..120 / 4.5..27 Nm/lb.in.
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