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IXGF20N250 - High Voltage IGBT

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification.

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High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) IXGF20N250 VCES = 2500V IC25 = 23A VCE(sat) ≤ 3.1V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, VGE = 19V, 1ms 10ms VGE= 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load TC = 25°C 1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 Minute Maximum Ratings 2500 V 2500 V ± 20 V ± 30 V 23 A 14 A 105 A 55 A ICM = 60 A 1500 V 100 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 20..120 / 4.5..27 Nm/lb.in.
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