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IXFX64N60Q3 - Power MOSFET

Download the IXFX64N60Q3 datasheet PDF. This datasheet also covers the IXFK64N60Q3 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low Intrinsic Gate Resistance.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier.
  • Low RDS(on) and QG Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK64N60Q3-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFX64N50Q3 N-Channel MOSFET Transistor Inchange Semiconductor
IXFX60N55Q2 Power MOSFET IXYS Corporation
IXFX62N25 HiPerFET Power MOSFET IXYS Corporation
IXFX100N25 Power MOSFET IXYS Corporation
IXFX150N15 Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFX64N60P PolarHV HiPerFET Power MOSFET
IXFX64N50P Power MOSFET
IXFX64N50Q3 Power MOSFET
IXFX66N50Q2 Power MOSFET
IXFX66N85X Power MOSFET

Full PDF Text Transcription

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK64N60Q3 IXFX64N60Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 64 A 250 A 64 A 3 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50 1250 -55 ... +150 150 -55 ... +150 V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.
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