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IXFX64N60P - PolarHV HiPerFET Power MOSFET

Download the IXFX64N60P datasheet PDF. This datasheet also covers the IXFK64N60P variant, as both devices belong to the same polarhv hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z D = Drain Tab = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Mounting force (PLUS247) Mounting torque (TO-264) TO-264 PLUS247 300 20..120/4.5..25 z z 1.13/10 Nm/lb. in. 10 6 g g z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS,.

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Note: The manufacturer provides a single datasheet file (IXFK64N60P_IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFX64N60Q3 Power MOSFET
IXFX64N50P Power MOSFET
IXFX64N50Q3 Power MOSFET
IXFX66N50Q2 Power MOSFET
IXFX66N85X Power MOSFET

Full PDF Text Transcription

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Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFK 64N60P IXFX 64N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 64 A ≤ 96 mΩ ≤ 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 64 150 64 80 3.5 20 1040 -55 ... +150 150 -55 ...
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