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IXFX170N20P - Power MOSFET

Download the IXFX170N20P datasheet PDF. This datasheet also covers the IXFK170N20P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Dynamic dv/dt Rating.
  • Avalanche Rated.
  • Fast Intrinsic Diode.
  • Low QG.
  • Low R DS(on).
  • Low Drain-to-Tab Capacitance.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK170N20P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFX100N25 Power MOSFET IXYS Corporation
IXFX150N15 Power MOSFET IXYS Corporation
IXFX180N10 Power MOSFETs IXYS Corporation
IXFX20N120 HiPerFET Power MOSFETs IXYS Corporation
IXFX20N120P Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFX170N20T GigaMOS Power MOSFET
IXFX170N20T GigaMOS Power MOSFET
IXFX100N65X2 Power MOSFET
IXFX120N20 Power MOSFET
IXFX120N25 HiPerFET Power MOSFETs

Full PDF Text Transcription

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PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK170N20P IXFX170N20P VDSS = ID25 =  RDS(on) 200V 170A 14m TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg L TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 200 V 200 V 20 V 30 V TC = 25C Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 170 A 160 A 400 A 85 A 4 J IS  IDM, VDD  VDSS, TJ  175C TC = 25C 20 1250 -55 ... +175 175 -55 ... +175 V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force (PLUS247) Mounting Torque (TO-264) 20..120/4.5..27 1.
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