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HiPerFETTM Power MOSFETs
Single MOSFET Die
Preliminary data sheet
IXFX 120N20 IXFK 120N20
V= DSS
ID25 = = RDS(on)
200 V 120 A
17 mΩ
trr ≤ 250 ns
Symbol
VDSS VDGR
VGS VGSM
ID25 ID104 IDM IAR
EAR EAS dv/dt
PD TJ T
JM
Tstg TL Md Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient
TC = 25°C (MOSFET chip capability) TC = 104°C (External lead capability) TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
T J
≤
150°C,
R G
=
2
Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247 TO-264
Maximum Ratings
200
V
200
V
±20
V
±30
V
120
A
76
A
480
A
120
A
64
mJ
3
J
15 V/ns
560
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.
IXFX120N20 Datasheet
