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IXFV30N50PS - Power MOSFET

Download the IXFV30N50PS datasheet PDF. This datasheet also covers the IXFH30N50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect DS99414(06/05) © 2005 IXYS All rights reserved IXFH 30N50P IXFQ 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 17 27 4150 VGS = 0 V, VDS = 25 V, f = 1 MHz 445 28 25 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 5 Ω (External) 27 75 21 70 VGS= 10 V, VDS = 0.5 VDSS, ID =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH30N50P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFV30N50P Power MOSFET
IXFV30N60P Power MOSFET
IXFV30N60PS Power MOSFET
IXFV36N50P N-Channel Power MOSFET
IXFV36N50PS N-Channel Power MOSFET

Full PDF Text Transcription

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Advance Technical Information PolarHVTM Power HiPerFET MOSFET N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS VDSS ID25 RDS(on) trr = 500 V = 30 A = 200 mΩ < 200 ns www.DataSheet4U.com TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 30 75 30 40 1.2 10 460 -55 ... +150 150 -55 ...
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