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IXFT9N80Q - Power MOSFETs

Download the IXFT9N80Q datasheet PDF. This datasheet also covers the IXFH9N80Q variant, as both devices belong to the same power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • l IXYS advanced low Q process g l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Unclamped Inductive Switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 50 µA 1 mA 1.1 Ω Advantages l Easy to mount l Space savings l High power density © 1999 IXYS All rights reserved 98629 (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH9N80Q_ETC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFT94N30T Power MOSFET
IXFT100N30X3HV N-Channel Power MOSFET
IXFT10N100 Power MOSFETs
IXFT12N100 Power MOSFETs
IXFT13N100 Power MOSFETs

Full PDF Text Transcription

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS I D25 RDS(on) = 800 V = 9A = 1.1 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM I D25 I DM IAR EAR EAS dv/dt PD TJ TJM T stg TL Md Weight Symbol VDSS V GS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 800 V 800 V ±20 V ±30 V 9A 36 A 9A 20 mJ 700 mJ 5 V/ns 180 -55 ... +150 150 -55 ... +150 300 1.13/10 6 4 W °C °C °C °C Nm/lb.in.
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