IXFP20N50P3M - Power MOSFET

Features

Plastic Overmolded Tab for Electrical Isolation.
Fast Intrinsic Rectifier.
Avalanche Rated.
Low RDS(ON) and QG.
Low Package Inductance Advantages.
High Power Density.
Easy to Mount.
Space Savings.

IXYS

Datasheet Details

Part number	IXFP20N50P3M
Manufacturer	IXYS
File Size	161.52 KB
Description	Power MOSFET
Datasheet	IXFP20N50P3M Datasheet
Additional preview pages of the IXFP20N50P3M datasheet.

📁 Similar Datasheet

IXFP20N85X - N-Channel MOSFET (INCHANGE)
IXFP220N06T3 - N-Channel MOSFET (INCHANGE)
IXFP22N60P3 - Polar3 HiperFET Power MOSFETs (IXYS Corporation)
IXFP22N60P3 - Power MOSFET (IXYS Corporation)
IXFP22N65X2 - N-Channel MOSFET (INCHANGE)
IXFP22N65X2M - N-Channel MOSFET (INCHANGE)
IXFP230N075T2 - Power MOSFET (IXYS Corporation)
IXFP230N075T2 - N-Channel MOSFET (INCHANGE)
IXFP24N60X - N-Channel MOSFET (INCHANGE)
IXFP24N65X - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS

IXFP20N50P3 - Power MOSFET
IXFP20N85X - Power MOSFET
IXFP220N06T3 - Power MOSFET
IXFP22N65X2 - Power MOSFET
IXFP22N65X2M - Power MOSFET
IXFP24N60X - Power MOSFET
IXFP26N30X3 - Power MOSFET
IXFP270N06T3 - Power MOSFET

Full PDF Text Transcription

Click to expand full text

Preliminary Technical Information Polar3TM HiperFETTM Power MOSFET IXFP20N50P3M VDSS = ID25 = RDS(on)  500V 8A 300m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 500 500 V V  30 V  40 V 8A 40 A 10 A 300 mJ 35 58 -55 ... +150 150 -55 ... +150 300 260 V/ns W  C  C  C °C °C 1.13 / 10 2.5 Nm/lb.

Published: Jan 9, 2020 |