IXFP220N06T3 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 4mΩ@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXFP220N06T3
Manufacturer	INCHANGE
File Size	246.58 KB
Description	N-Channel MOSFET
Datasheet	IXFP220N06T3 Datasheet
Additional preview pages of the IXFP220N06T3 datasheet.

📁 Similar Datasheet

IXFP220N06T3 - Power MOSFET (IXYS)
IXFP22N60P3 - Polar3 HiperFET Power MOSFETs (IXYS Corporation)
IXFP22N60P3 - Power MOSFET (IXYS Corporation)
IXFP22N65X2 - Power MOSFET (IXYS)
IXFP22N65X2M - Power MOSFET (IXYS)
IXFP20N50P3 - Power MOSFET (IXYS)
IXFP20N50P3M - Power MOSFET (IXYS)
IXFP20N85X - Power MOSFET (IXYS)
IXFP230N075T2 - Power MOSFET (IXYS Corporation)
IXFP24N60X - Power MOSFET (IXYS)

Other Datasheets by INCHANGE

IXFP22N65X2 - N-Channel MOSFET
IXFP22N65X2M - N-Channel MOSFET
IXFP20N85X - N-Channel MOSFET
IXFP230N075T2 - N-Channel MOSFET
IXFP24N60X - N-Channel MOSFET
IXFP24N65X - N-Channel MOSFET
IXFP24N65X2 - N-Channel MOSFET
IXFP102N15T - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor IXFP220N06T3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 220 IDM Drain Current-Single Pulsed 500 PD Total Dissipation @TC=25℃ 440 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.

Published: Nov 2, 2020 |