Datasheet4U Logo Datasheet4U.com

IXFK180N15P - Polar HiPerFET Power MOSFET

Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in. ) from case for 10 s Mounting torque 300 Advantages z z z 1.13/10 Nm/lb. in. 10 g Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Valu.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK180N10 Power MOSFETs IXYS Corporation
IXFK180N07 N-Channel MOSFET Transistor Inchange Semiconductor
IXFK100N10 Power MOSFET IXYS Corporation
IXFK100N25 Power MOSFET IXYS Corporation
IXFK102N30P Polar MOSFETs IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFK180N07 Power MOSFET
IXFK180N25T GigaMOS Power MOSFET
IXFK180N25T GigaMOS Power MOSFET
IXFK100N65X2 Power MOSFET
IXFK120N20 Power MOSFET

Full PDF Text Transcription

Click to expand full text
Advance Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 180N15P VDSS ID25 = 150 V = 180 A RDS(on) ≤ 11 mΩ Symbol VDSS VDGR VDSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 180 75 380 60 100 4 10 800 -55 ... +175 175 -55 ...
Published: |