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IXFA34N65X3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • International Standard Package.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA34N65X3 D G S Symbol VDSS V DGR V GSS VGSM ID25 IDM I A E AS dv/dt P D TJ T JM Tstg T SOLD F C Weight Test Conditions TJ = 25C to 150C T J = 25C to 150C, R GS = 1M Continuous Transient Maximum Ratings 650 V 650 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM T C = 25C T C = 25C IS  IDM, VDD  VDSS, TJ  150°C T C = 25C 34 48 5 750 50 446 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Plastic Body for 10s 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BV DSS V = 0V, I = 1mA GS D VGS(th) VDS = VGS, ID = 2.