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IXFA3N80 - Power MOSFET

Key Features

  • l l l 1.13/10 Nm/lb. in. 4 2 g g International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 50 1 3.6 V V nA mA mA W Advantages l l l Easy to mount Space savings High power density VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID =.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet IXFA 3N80 IXFP 3N80 VDSS = 800 V ID25 = 3.6 A RDS(on) = 3.6 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ±20 ±30 3.6 14.4 3.6 10 400 5 100 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W °C °C °C °C TO-220 (IXFP) D (TAB) G DS TO-263 (IXFA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.