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NPT3 IGBT
in ISOPLUS247™
IXER 20N120 IXER 20N120D1
IC25
= 36 A
VCES = 1200 V
V = CE(sat)typ 2.4 V
C
C
ISOPLUS247™
G
G
E
IXER 20N120
E
IXER 20N120D1
G C E
G = Gate
Isolated Backside
C = Collector E = Emitter
IGBT
Symbol
VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA)
Ptot
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = ±15 V; RG = 68 W; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 68 W TVJ = 125°C; non-repetitive TC = 25°C
Maximum Ratings
1200 V
± 20
V
29 A 19 A
40 A VCES
10 µs
130 W
Symbol
VCE(sat)
VGE(th) ICES
IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthCH
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
IC = 0.
IXER20N120 Datasheet
