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IGBT with Reverse Blocking capability
IXRH 40N120
VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ.
C
TO-247 AD
G
G
C E
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
VCE(sat)
VGE(th) I
CES
IGES QGon
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C
Maximum Ratings
±1200
V
± 20
V
55
A
35
A
80
A
600
V
300
W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
IC = 2 mA; VGE = VCE
V CE
=
V; CES
V GE
=
0
V;
TVJ
=
25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
VCE = 120V; VGE = 15 V; IC = 35 A
2.3 2.7 V
2.
IXEH40N120D1 Datasheet
