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IXDR30N120D1 - High Voltage IGBT

Download the IXDR30N120D1 datasheet PDF. This datasheet also covers the IXDR30N120 variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode.
  • Epoxy meets UL 94V-0.
  • Isolated and UL registered E153432 Advantages.
  • DCB Isolated mounting tab.
  • Meets TO-247AD package Outline.
  • Package for clip or spring mounting.
  • Space savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXDR30N120_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

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Full PDF Text Transcription

Click to expand full text
High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability C Square RBSOA G E IXDR 30N120 IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A V = CE(sat) typ 2.
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