Datasheet4U Logo Datasheet4U.com

IXDR30N120 - High Voltage IGBT

Features

  • NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode.
  • Epoxy meets UL 94V-0.
  • Isolated and UL registered E153432 Advantages.
  • DCB Isolated mounting tab.
  • Meets TO-247AD package Outline.
  • Package for clip or spring mounting.
  • Space savings.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXDR30N120D1 High Voltage IGBT IXYS
IXDR35N60BD1 IGBT IXYS
IXD1209 High Speed LDO Regulator IXYS
IXD1212 High Speed LDO Regulator IXYS
IXD1504 0.6uA Current Consumption Voltage Regulator IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXDA20N120AS High Voltage IGBT
IXDD404 4 Amp Dual Low-Side Ultrafast MOSFET Driver
IXDD404PI 4 Amp Dual Low-Side Ultrafast MOSFET Driver
IXDD404SI 4 Amp Dual Low-Side Ultrafast MOSFET Driver
IXDD404SI-16 4 Amp Dual Low-Side Ultrafast MOSFET Driver

Full PDF Text Transcription

Click to expand full text
High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability C Square RBSOA G E IXDR 30N120 IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A V = CE(sat) typ 2.
Published: |