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IXBN75N170 - Monolithic Bipolar MOS Transistor

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Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170 VCES IC90 VCE(sat) = = ≤ 1700V 75A 3.1V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous 1700 1700 ±20 V V V Transient ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 145 75 680 ICM = 150 VCE < 0.8 • VCES 625 -55 ... +150 A A A A W °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 300 °C 260 °C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque (M4) 2500 3000 1.5/13 1.3/11.5 V~ V~ Nm/lb.in. Nm/lb.in.
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