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IXBN42N170A - Monolithic Bipolar MOS Transistor

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Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN42N170A VCES = IC90 = VCE(sat) tfi ≤ = 1700V 21A 6.0V 20ns E Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = = 90°C 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load VRGGE==1105ΩV, ,nVonCErSe=pe1t2it0iv0eV, TJ = 125°C TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1700 1700 V V ± 20 V ± 30 V 38 A 21 A 265 A ICM = 84 1360 A V 10 313 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 μs W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
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