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CPC5602C - N-Channel FET

Download the CPC5602C datasheet PDF. This datasheet also covers the CPC5602 variant, as both devices belong to the same n-channel fet family and are provided as variant models within a single manufacturer datasheet.

Description

The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process.

The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Features

  • 350V Drain-to-Source Voltage.
  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • Low On-resistance: 8 (Typical) @ 25°C.
  • Low VGS(off) Voltage: -2.0V to -3.6V.
  • High Input Impedance.
  • Low Input and Output Leakage.
  • Small Package Size SOT-223.
  • PC Card (PCMCIA) Compatible.
  • PCB Space and Cost Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CPC5602-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CPC5602C N Channel FET Clare Inc.
CPC5601 Auxiliary Programmable Driver Clare
CPC5603 N-Channel MOSFET Clare
CPC5603C N-Channel FET Clare
CPC5604 Optical Data Access Arrangement Clare Inc.

Other Datasheets by IXYS (Littelfuse)

Part Number Description
CPC5602CTR N-Channel FET
CPC5602 N-Channel FET
CPC5601 Auxiliary Programmable Driver
CPC5601D Auxiliary Programmable Driver
CPC5601DTR Auxiliary Programmable Driver

Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power Rating 350 14 2.5 Units V  W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-resistance: 8 (Typical) @ 25°C • Low VGS(off) Voltage: -2.0V to -3.
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