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CPC5602 - N-Channel FET

Description

The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process.

The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Features

  • 350V Drain-to-Source Voltage.
  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • Low On-resistance: 8 (Typical) @ 25°C.
  • Low VGS(off) Voltage: -2.0V to -3.6V.
  • High Input Impedance.
  • Low Input and Output Leakage.
  • Small Package Size SOT-223.
  • PC Card (PCMCIA) Compatible.
  • PCB Space and Cost Savings.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
CPC5602C N-Channel FET
CPC5602CTR N-Channel FET
CPC5601 Auxiliary Programmable Driver
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Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power Rating 350 14 2.5 Units V  W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-resistance: 8 (Typical) @ 25°C • Low VGS(off) Voltage: -2.0V to -3.
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