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CPC3960 - N-Channel MOSFET

Description

The CPC3960 is a 600V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process.

Features

  • High Breakdown Voltage: 600V.
  • On-Resistance: 44 max. at 25ºC.
  • Low VGS(off) Voltage: -1.4 to -3.1V.
  • High Input Impedance.
  • Small Package Size: SOT-223.

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Datasheet preview – CPC3960

Datasheet Details

Part number CPC3960
Manufacturer IXYS
File Size 120.08 KB
Description N-Channel MOSFET
Datasheet download datasheet CPC3960 Datasheet
Additional preview pages of the CPC3960 datasheet.

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Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 600V RDS(on) (max) 44 IDSS (min) 100mA Package SOT-223 Features • High Breakdown Voltage: 600V • On-Resistance: 44 max. at 25ºC • Low VGS(off) Voltage: -1.4 to -3.1V • High Input Impedance • Small Package Size: SOT-223 Applications • Current Regulator • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply CPC3960 600V N-Channel Depletion-Mode FET Description The CPC3960 is a 600V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process. Yielding a robust device with high input impedance, this process enables world class, high voltage MOSFET performance with an economical silicon gate architecture.
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