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CPC3980 - N-Channel MOSFET

Description

The CPC3980 is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process.

Features

  • High Breakdown Voltage: 800V.
  • Low On-Resistance: 45 max. at 25ºC.
  • Low VGS(off) Voltage: -1.4 to -3.1V.
  • High Input Impedance.
  • Small Package Size: SOT-223.

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Datasheet preview – CPC3980

Datasheet Details

Part number CPC3980
Manufacturer IXYS
File Size 116.66 KB
Description N-Channel MOSFET
Datasheet download datasheet CPC3980 Datasheet
Additional preview pages of the CPC3980 datasheet.

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Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 800V RDS(on) (max) 45 IDSS (min) 100mA Package SOT-223 Features • High Breakdown Voltage: 800V • Low On-Resistance: 45 max. at 25ºC • Low VGS(off) Voltage: -1.4 to -3.1V • High Input Impedance • Small Package Size: SOT-223 Applications • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply • Current Regulators Package Pinout D 4 123 GDS CPC3980 N-Channel Depletion-Mode Vertical DMOS FET Description The CPC3980 is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process.
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