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CPC3710 - N-Channel MOSFET

Description

The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Features

  • Low RDS(on) at Cold Temperatures.
  • Low On-Resistance: 10 max. at 25ºC.
  • High Input Impedance.
  • High Breakdown Voltage: 250VP.
  • Low VGS(off) Voltage: -1.6 to -3.9V.
  • Small Package Size SOT-89.

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Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 250VP RDS(on) (max) 10 IDSS (min) 220mA Package SOT-89 Features • Low RDS(on) at Cold Temperatures • Low On-Resistance: 10 max. at 25ºC • High Input Impedance • High Breakdown Voltage: 250VP • Low VGS(off) Voltage: -1.6 to -3.9V • Small Package Size SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply Package Pinout G D S D (SOT-89) CPC3710 250V N-Channel Depletion-Mode FET Description The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.
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