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VMO580-02F - N-Channel MOSFET

Features

  • HiPerFETTM technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode.
  • package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated ceramic base plate Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 3.2 2 3 1 2750 500 1350 210 500 900 350 0.9 300 0.07 1.1 3.8 mΩ 4.

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HipPerFETTM Module N-Channel Enhancement Mode VMO 580-02F VDSS ID25 RDS(on) = 200 V = 580 A = 3.8 mΩ D S D G KS G KS S Preliminary Data MOSFET Symbol VDSS VGS ID25 ID80 IF25 IF80 TC = 25°C TC = 80°C (diode) TC = 25°C (diode) TC = 80°C Conditions TVJ = 25°C to 150°C Maximum Ratings 200 ±20 580 430 580 430 V V A A A A Features • HiPerFETTM technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode • package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated ceramic base plate Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 3.2 2 3 1 2750 500 1350 210 500 900 350 0.
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