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VMO1200-01F - N-Channel Enhancement Mode MOSFET

Features

  • PolarHT™ MOSFET technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode.
  • package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated DCB ceramic base plate.

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Datasheet Details

Part number VMO1200-01F
Manufacturer IXYS (now Littelfuse)
File Size 509.40 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet VMO1200-01F Datasheet
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PolarHT™ Module N-Channel Enhancement Mode D G KS S VMO 1200-01F VDSS = 100 V ID25 = 1220 A RDS(on) = 1.25 mΩ max. KS G SD MOSFET Symbol VDSS VGS ID25 ID80 IF25 IF80 Conditions TVJ = 25°C to 150°C TC = 25°C TC = 80°C TC = 25°C (diode) TC = 80°C (diode) Maximum Ratings 100 V ± 20 V 1220 A 970 A 1220 A 970 A Symbol RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec td(on) tr td(off) tf Eon Eoff Erec RthJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID80  TVJ = 25°C TVJ = 125°C VDS = 20 V; ID = 3 mA VDS = 0.8 • VDSS; VGS = 0 V; TVJ = 25°C  TVJ = 125°C VGS = ± 20 V; VDS = 0 V VGS = 10 V; VDS = 50 V; ID = 1000 A 1.00 1.25 mW 1.62 2.00 mW 3 5 V 0.3 mA 6 mA 1.
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