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IXUC160N075 - Trench Power MOSFET

Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Trench MOSFET - very fast lsowwitcRhDiSn(ogn) - usable intrinsic reverse diode z Low drain to tab capacitance(.

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ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 ISOPLUS220TM Electrically Isolated Back Surface VDSS = ID25 = RDS(on) = 75 V 160 A 6.5 mΩ ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit TC = 25°C TC = 25°C 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 75 V ±20 V 160 A 130 A 160 A 120 A 50 A tbd mJ 300 W -55 ... +175 °C 175 °C -55 ... +150 °C 300 °C 2500 V~ 11 ... 65 / 2.4 ...
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