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IXUC100N055 - 55V Trench Power MOSFET

Features

  • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXUC120N10 Trench Power MOSFET ISOPLUS220
IXUC160N075 Trench Power MOSFET
IXUC200N055 Trench Power MOSFET ISOPLUS220

Full PDF Text Transcription

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www.DataSheet.co.kr ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC100N055 VDSS = 55 V ID25 = 100 A RDS(on) = 7.7 mW ISOPLUS 220TM Symbol VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force with clips Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit TC = 25°C TC = 25°C Maximum Ratings 55 ±20 100 80 100 70 45 500 150 -55 ... +175 175 -55 ... +150 300 2500 11 ... 65 / 2.4 ...
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