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IXTM50N20 - MegaMOS FET

Download the IXTM50N20 datasheet PDF. This datasheet also covers the IXTH50N20 variant, as both devices belong to the same megamos fet family and are provided as variant models within a single manufacturer datasheet.

Features

  • l l l l l International standard packages Low RDS (on).

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Note: The manufacturer provides a single datasheet file (IXTH50N20_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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www.DataSheet4U.com MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM T C = 25°C Maximum Ratings 200 200 ±20 ±30 50 200 300 -55 ... +150 150 -55 ... +150 V V V V A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C D = Drain, TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.
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