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MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V
ID25
11 A 13 A
RDS(on)
0.95 Ω 0.80 Ω
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR VGS VGSM I
D25
IDM
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
T C
= 25°C
TC = 25°C, pulse width limited by TJM
11N80 13N80 11N80 13N80
800 V
800 V
±20 V ±30 V
11 A 13 A 44 A 52 A
PD TJ TJM Tstg Md Weight
TC = 25°C Mounting torque
300 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 1.6 mm (0.062 in.
IXTM11N80 Datasheet
