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IXGP16N60B2D1 - HiPerFAST IGBTs

Download the IXGP16N60B2D1 datasheet PDF. This datasheet also covers the IXGA16N60B2D1 variant, as both devices belong to the same hiperfast igbts family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Optimized for Low Conduction and Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGA16N60B2D1_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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HiPerFASTTM IGBTs B2-Class High Speed w/ Diode IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 1.95V 70ns TO-263 AA (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 600 V 600 V ±20 V ±30 V TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TJ = 125°C, RG = 22Ω Clamped Inductive load TC = 25°C 40 A 16 A 11 A 100 A ICM = 32 A VCE ≤ VCES 150 W -55 ... +150 °C 150 °C -55 ... +150 °C Mounting Torque (TO-220 & TO-247) Mounting Force (TO-263) 1.13/10 10..65 / 2.2..14.6 Nm/lb.in. N/lb. Maximum Lead Temperature for Soldering 1.6mm (0.
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