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IXGH15N120C - IGBT Lightspeed Series

Download the IXGH15N120C datasheet PDF. This datasheet also covers the IXGT15N120C variant, as both devices belong to the same igbt lightspeed series family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD.
  • Low switching losses.
  • MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGT15N120C_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH15N120CD1 Low VCE(sat) IGBT
IXGH15N120B HiPerFAST IGBT
IXGH15N120BD1 Low VCE(sat) IGBT
IXGH10N300 High Voltage IGBT
IXGH10N60 High speed IGBT

Full PDF Text Transcription

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IGBT Lightspeed Series Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load TC = 25°C IXGH 15N120C IXGT 15N120C VCES = 1200 V = 30 A IC25 VCE(sat) = 3.8 V tfi(typ) = 115 ns Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A W °C °C °C °C °C TO-268 (IXGT) G E (TAB) TO-247 AD (IXGH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum Lead temperature for soldering 1.6 mm (0.062 in.
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