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IXGH10N170A - High Voltage IGBT

Features

  • z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z Very high frequency z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification.

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IXGH10N170 High Voltage IGBT
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Full PDF Text Transcription

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High Voltage IGBT Preliminary Data Sheet IXGH 10N170A IXGT 10N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 10 A = 6.0 V = 35 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 10 5 20 VGE = 15 V, TVJ = 125°C, RG = 22Ω Clamped inductive load ICM = 20 @ 0.8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω 10 V V V V A A A A µs PC TC = 25°C TJ TJM Tstg 140 -55 ... +150 150 -55 ... +150 W °C °C °C Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.
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