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IXFR55N50 - Power MOSFETs

Download the IXFR55N50 datasheet PDF. This datasheet also covers the IXFR50N50 variant, as both devices belong to the same power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFR50N50-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXFR14N100Q2 HiPerFET Power MOSFET IXYS
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFR55N50F HiPerRF Power MOSFET
IXFR50N50 Power MOSFETs
IXFR58N20Q HiPerFET Power MOSFETs
IXFR100N25 HiPerFET Power MOSFETs
IXFR10N100F HiPerFET Power MOSFETs

Full PDF Text Transcription

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HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET IXFR 50N50 IXFR 55N50 VDSS ID25 500 V 43 A 500 V 48 A trr ≤ 250 ns RDS(on) 100 mΩ 90 mΩ Symbol VDSS V DGR VGS V GSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 50N50 55N50 50N50 55N50 50N50 55N50 500 500 ±20 ±30 43 48 200 220 50 55 60 3 5 400 -40 ... +150 150 -40 ...
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