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HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
Single Die MOSFET
IXFR 50N50 IXFR 55N50
VDSS
ID25
500 V 43 A
500 V 48 A
trr ≤ 250 ns
RDS(on)
100 mΩ 90 mΩ
Symbol
VDSS V
DGR
VGS V
GSM
ID25 IDM IAR
EAR EAS dv/dt
PD TJ TJM Tstg TL VISOL Weight
Symbol
VDSS VGS(th) I
GSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
50N50 55N50 50N50 55N50 50N50 55N50
500 500
±20 ±30
43 48 200 220 50 55
60
3
5
400
-40 ... +150 150
-40 ...
IXFR50N50 Datasheet
