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IXFR26N50Q - HiPerFET Power MOSFETs

Download the IXFR26N50Q datasheet PDF. This datasheet also covers the IXFR24N50Q variant, as both devices belong to the same hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFR24N50Q_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXFR102N30P Polar HiPerFET Power MOSFET IXYS
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IXFR14N100Q2 HiPerFET Power MOSFET IXYS
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFR26N50 HiPerFET Power MOSFETs
IXFR26N60Q HiPerFETTM Power MOSFETs
IXFR200N10P PolarTM HiPerFET Power MOSFET
IXFR20N100P Polar Power MOSFET HiPerFET
IXFR20N120P Polar Power MOSFET HiPerFET

Full PDF Text Transcription

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HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 0.20 Ω 0.23 Ω 500 V 24 A 500 V 22 A trr ≤ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 26N50Q 24N50Q 26N50Q 24N50Q 26N50Q 24N50Q 24 22 104 96 26 24 30 1.5 5 250 -55 ... +150 150 -55 ...
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