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IXFR26N50 - HiPerFET Power MOSFETs

Download the IXFR26N50 datasheet PDF. This datasheet also covers the IXFR24N50 variant, as both devices belong to the same hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • W °C °C °C °C V~ g.
  • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation.
  • Low drain to tab capacitance(.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFR24N50_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFR102N30P Polar HiPerFET Power MOSFET IXYS
IXFR120N25P PolarHT HiPerFET Power MOSFET IXYS
IXFR140N20P PolarHT HiPerFET Power MOSFET IXYS
IXFR14N100Q2 HiPerFET Power MOSFET IXYS
IXFR14N80 Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFR26N50Q HiPerFET Power MOSFETs
IXFR26N60Q HiPerFETTM Power MOSFETs
IXFR200N10P PolarTM HiPerFET Power MOSFET
IXFR20N100P Polar Power MOSFET HiPerFET
IXFR20N120P Polar Power MOSFET HiPerFET

Full PDF Text Transcription

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Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM IXFR 24N50 (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family www.DataSheet4U.com VDSS ID25 RDS(on) 0.20 W 0.23 W 500 V 24 A 500 V 22 A trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 26N50 24N50 26N50 24N50 26N50 24N50 Maximum Ratings 500 500 ±20 ±30 26 24 104 96 26 24 30 5 250 -55 ... +150 150 -55 ...
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