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IXFR21N100Q - HiPerFETTM Power MOSFETs

Features

  • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation.
  • IXYS advanced low Qg process.
  • Low gate charge and capacitances - easier to drive - faster switching.
  • Low drain to tab capacitance(.

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Full PDF Text Transcription

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HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet www.DataSheet4U.com IXFR 21N100Q VDSS ID25 RDS(on) = 1000 V = 19 A = 0.50 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 19 84 21 21 60 2.3 5 400 -55 ... +150 150 -55 ...
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