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PolarHVTM HiPerFET Power MOSFET
IXFC 20N80P IXFR 20N80P
Electrically Isolated Back Surface
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
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VDSS = 800 V ID25 = 10 A RDS(on) ≤ 500 mΩ ≤ 250 ns trr
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω TC = 25°C
Maximum Ratings 800 800 ±30 ±40 11 60 10 30 1.0 10 166 -55 ... +150 150 -55 ...
IXFR20N80P Datasheet
