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IXFP4N100QM - Power MOSFET

Features

  • Plastic Overmolded Tab for Electrical Isolation International Standard Package Avalanche Rated Fast Intrinsic Diode Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages www. DataSheet4U. net Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1.5mA VGS = ±20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 2A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.0 5.0 V V High Power Density Ea.

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Full PDF Text Transcription

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Advance Technical Information HiPerFETTM Power MOSFET Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C IXFP4N100QM VDSS = 1000V ID25 = 2.2A RDS(on) ≤ 3.0Ω Maximum Ratings 1000 1000 ±20 ±30 2.2 16 4 700 5 46 - 55 ... +150 150 - 55 ... +150 300 260 1.13 / 10 2.5 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g OVERMOLDED (IXFP...
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