Datasheet4U Logo Datasheet4U.com

IXFP4N100PM - Power MOSFET

Features

  • z z z z 1.6 mm (0.062 in. ) from Case for 10 s Plastic Body for 10 s Mounting Torque 300 260 1.13/10 2.5 Plastic Overmolded Tab for Electrical Isolation Avalanche Rated Fast Intrinsic Diode Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 2A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.0 6.0 V V High Powe.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFP4N85X Power MOSFET IXYS
IXFP4N85XM Power MOSFET IXYS
IXFP102N15T N-Channel MOSFET INCHANGE
IXFP110N15T2 N-Channel MOSFET INCHANGE
IXFP12N65X2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFP4N100P Power MOSFET
IXFP4N100Q Power MOSFET
IXFP4N100QM Power MOSFET
IXFP05N100M High Voltage HiperFET
IXFP102N15T Power MOSFET

Full PDF Text Transcription

Click to expand full text
Advance Technical Information PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP4N100PM VDSS ID25 RDS(on) = 1000V = 2.5A ≤ 3.3Ω OVERMOLDED Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C Maximum Ratings 1000 1000 ± 20 ± 30 2.5 8.0 4.0 200 10 57 - 55 ... +150 150 - 55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g Advantages z z z G DS D = Drain G = Gate S = Source Features z z z z 1.6 mm (0.062 in.) from Case for 10 s Plastic Body for 10 s Mounting Torque 300 260 1.
Published: |