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IXFN64N50PD3 - Power MOSFET

Download the IXFN64N50PD3 datasheet PDF. This datasheet also covers the IXFN64N50PD2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Mounting Torque Terminal Connection Torque 1.5/13 1.3/11.5 30 Fast Intrinsic Diode in Boost Configuration z International Standard Package z Encapsulating Epoxy Meets UL 94 V-0, Flammability Classification z miniBLOC with Aluminium Nitride Isolation z Avalanche Rated z Low Package Inductance Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 500μA VDS = VGS, ID = 8mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFN64N50PD2_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFN64N50PD2 Power MOSFET
IXFN64N50P HiPerFET Power MOSFET
IXFN60N60 HiPerFET Power MOSFET
IXFN100N10S1 HiPerFET Power MOSFETs
IXFN100N10S2 HiPerFET Power MOSFETs

Full PDF Text Transcription

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PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations (Ultra-fast FRED Diode) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN64N50PD2 IXFN64N50PD3 3 4 3 VDSS ID25 trr RDS(on) = 500V = 50A ≤ 85mΩ ≤ 200ns miniBLOC, SOT-227 B E153432 2 1 4 2 2 D2 1 D3 1 4 3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg Md www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤150°C TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 50 200 64 2.5 10 625 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C Nm/lb.in. Nm/lb.in.
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