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HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s IS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC= 25°C, Chip capability TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
IXFN 60N60 VDSS ID25
RDS(on)
D G S
= 600 V = 60 A = 75 mW
S
Maximum Ratings 600 600 ±20 ±30 60 240 60 64 4 5 700 -55 ... +150 150 -55 ...
IXFN60N60 Datasheet
