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Power MOSFET HiPerFETTM Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN44N80
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dV/dt
PD TJ TJM Tstg VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
Continuous Transient
TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 1Ω
TC = 25°C
50/60 Hz, RMS t = 1min
IISOL ≤ 1mA
t = 1s
Mounting torque Terminal connection torque
Maximum Ratings
800
V
800
V
±20
V
±30
V
44
A
176
A
44
A
64
mJ
4
J
5
V/ns
700
-55 ... +150 150
-55 ... +150
2500 3000
1.5/13 1.3/11.5
30
W
°C °C °C
V~ V~
Nm/lb.in. Nm/lb.in.
IXFN44N80 Datasheet
