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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 24N80P IXFK 24N80P IXFT 24N80P
VDSS = 800 V ID25 = 24 A RDS(on) ≤ 400 mΩ ≤ 250 ns trr
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 800 800 ±30 ±40 24 55 12 50 1.5 10 650 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J
TO-247 (IXFH)
G
D
S
D (TAB)
TO-268 (IXFT) Case Style
G
V/ns W °C °C °C
S
D (TAB)
TO-264 AA (IXFK)
Mounting torque (TO-247 & TO-264) TO-247 TO-268 TO-264 1.6 mm (0.062 in.
IXFH24N80P Datasheet
